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6MBI75UA-120
IGBT Module U-Series
Features
* High speed switching * Voltage drive * Low inductance module structure
1200V / 75A 6 in one-package
Applications
* Uninterruptible power supply * Inverter for Motor drive * AC and DC Servo drive amplifier * Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso Conditions Rating 1200 20 100 75 200 150 75 150 390 +150 -40 to +125 2500 3.5 Unit V V A
Continuous Tc=25C Tc=80C 1ms Tc=25C Tc=80C
Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 between thermistor and others *2 Screw Torque Mounting *3
1 device
W C VAC N*m
AC:1min.
*1 : All terminals should be connected together when isolation test will be done. *2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. *3 :Recommendable value : 2.5 to 3.5 N*m(M5)
Electrical characteristics (at Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr R lead R Conditions VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=75mA Tj=25C VGE=15V, IC=75A Tj=125C Tj=25C Tj=125C VCE=10V, VGE=0V, f=1MHz VCC=600V IC=75A VGE=15V RG=9.1 VGE=0V IF=75A Tj=25C Tj=125C Tj=25C Tj=125C Characteristics Min. Typ. - - - - 4.5 6.5 - 2.05 - 2.30 - 1.75 - 2.00 - 8 - 0.25 - 0.12 - 0.03 - 0.36 - 0.07 - 2.10 - 2.30 - 1.80 - 2.00 - - - 4.1 - 5000 465 495 3305 3375 Unit Max. 1.0 200 8.5 2.40 - 2.10 - - 1.20 0.60 - 1.00 0.30 2.50 - 2.20 - 0.35 - - 520 3450 mA nA V V
Inverter
Input capacitance Turn-on time
nF s
Turn-off time Forward on voltage
V
B value B *4:Biggest internal terminal resistance among arm.
Thermistor
Reverse recovery time Lead resistance, terminal-chip*4 Resistance
IF=75A T=25C T=100C T=25/50C
s m
Thermal resistance characteristics
Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*5 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. - - - - - 0.05 Unit Max. 0.32 0.73 - C/W C/W C/W
*5 : This is the value which is defined mounting on the additional cooling fin with thermal compound
6MBI75UA-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip
200 200
IGBT Module
Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C/ chip
VGE=20V 150 Collector current : Ic [A]
15V
12V 150 Collector current : Ic [A]
VGE=20V
15V
12V
100
100 10V
10V
50 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
50 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip
200 10
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip
Collector - Emitter voltage : VCE [ V ]
150 Collector current : Ic [A]
T j=25C
T j=125C
8
6
100
4 Ic=150A Ic=75A Ic= 37.5A
50
2
0 0 1 2 3 4
0 5 10 15 20 25
Collector-Emitter voltage : VCE [V]
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1M Hz, Tj= 25C
100.0 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ]
Dynamic Gate charge (typ.) Vcc=600V, Ic=75A, Tj= 25C
Capacitance : Cies, Coes, Cres [ nF ]
Cies 10.0
VGE
Cres 1.0
Coes 0.1 0 10 20 30
0 0 100 200
VCE 300 400
Collector-Emitter voltage : VCE [V]
Gate charge : Qg [ nC ]
6MBI75UA-120
Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=9.1, Tj= 25C
1000 1000 toff Switching time : ton, tr, toff, tf [ nsec ] toff ton tr 100 tf Switching time : ton, tr, toff, tf [ nsec ]
IGBT Module
Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=9.1, Tj=125C
tr ton
100
tf
10 0 50 100 150 200 Collector current : Ic [ A ]
10 0 50 100 150 200 Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=75A, VGE=15V, Tj= 25C
10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 20
Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=9.1
Switching time : ton, tr, toff, tf [ nsec ]
Eoff(125C) 15 Eon(125C) 10 Eoff(25C) Eon(25C)
1000 toff ton 100
tr
tf
5 Err(125C) Err(25C) 0
10 1 10 100 1000
0
50
100
150
200
Gate resistance : Rg [ ]
Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=75A, VGE=15V, Tj= 125C
200 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon 20 Collector current : Ic [ A ] 150
Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 9.1 ,Tj <= 125C
Eoff 10
100
50
Err 0 1 10 100 1000 0 0 400 800 1200 Gate resistance : Rg [ ] Collector - Emitter voltage : VCE [ V ]
6MBI75UA-120
Forward current vs. Forward on voltage (typ.) chip
125 T j=25C T j=125C 75 1000
IGBT Module
Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=9.1
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
100 Forward current : IF [ A ]
100
50
trr (125C) Irr (125C) trr (25C) Irr (25C)
25
0 0 1 2 3 4 Forward on voltage : VF [ V ]
10 0 50 100 150 200 Forward current : IF [ A ]
Transient thermal resistance (max.)
10.000 100
Temperature characteristic (typ.)
Thermal resistanse : Rth(j-c) [ C/W ]
Resistance : R [ k ]
1.000
FWD IGBT
10
0.100
1
0.010
0.001 0.001
0.010
0.100
1.000
0.1 -60 -40 -20 0
20 40 60 80 100 120 140 160 180 Temperature [C ]
Pulse width : Pw [ sec ]
6MBI75UA-120
Outline Drawings, mm M636
IGBT Module
(
) shows reference dimension.
Equivalent Circuit Schematic
25,26
15,16
17
18
1 2 U 23,24 3 4 27,28
5 6 V 21,22 7 8
9 10 W 19,20 11 12 13,14

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